Many ALD processes are saddled by slow and ineffective reactions. These processes can be boosted by our Catalyzing Reactions for Induced Surface Processes (CRISP). CRISP generates highly reactive intermediates at the point of use. For example, commonly used oxidizer, H₂O, is substituted by a mixture of hydrazine (N₂H₄) and ozone (O₃) to generate highly reactive intermediates such as OH radicals. CRISP processes are also virtually temperature independent and facilitate low temperature ALD processes with sub-second cycle times down to 70 °C. CRISP processes realize a myriad of previously overly slow ALD processes grown at the lower temperature range of 70-200 °C, such as SiO₂ and many ALD films.