Semiconductors

Sundew’s high-productivity turn-key processes are especially suitable for challenging semiconductor applications requiring highest quality, extremely conformal ALD films over area enhanced structures. In particular, high-K dielectrics, metal-insulator-metal (MIM) film stacks, ultra-conformal SiO₂ for trench isolation and ALD-Cap for chip passivation.

High-K Dielectrics

Advanced capacitor structures with area enhancement approaching 50X stretch the limitations of ALD precursor delivery, especially since precursors suitable for High-K dielectrics such as hafnium and zirconium are extremely low-volatility. Sundew combines the high precursor utilization efficiency of SMFD-ALD with innovative chemical sources and integrated millisecond-response ALD manifold to deliver turn-key high-productivity capacitor and transistor manufacturing solutions at sub-second cycle times.

Sundew’s sub-second cycle time HfO₂ and ZrO₂ dielectrics, in combination with top and bottom TiN electrodes are tailored for advanced capacitor applications at the FEOL while TiN/Ta2O5/TiN stacks are implemented for the manufacturing of advanced RF and BEOL memory capacitors.

The pursuit of low EOT, low leakage current and high electron mobility transistors depends crucially on the interface between silicon and the transistor gate dielectric. With its newly introduced proprietary process that enables deposition, for the first time, of high-quality true ALD SiO₂, Sundew’s engineered hafnium silicate provides a key, highest quality interface to HfO₂.

In addition, our turn-key high-quality Al₂O₃ is the most cost effective solution for emerging Al₂O₃ based floating gate devices, such as flash non-volatile memory and ASIC.

Trench Isolation

Sundew has recently introduced a proprietary process that enables, for the first time, sub-second cycle time deposition of high-quality true ALD SiO₂ at a wide temperature range. Trench isolation with conformal SiO₂ ALD over deep and re-entrant trenches is now available on our Revolution wafer processing systems.

ALD-Cap Passivation

ALD-Cap® substitutes SiN-Cap for a proven, MIL-SPEC enhanced reliability in harsh environments. Sundew’s ALD-Cap® is a lower-cost substitute with improved manufacturing yield. ALD-Cap® is particularly suitable for passivation of compound semiconductors, RF ICs, power ICs, analog and sensor ICs, where the reliability of SiN-Cap passivation is becoming increasingly marginal with generations advancement.

Compound Semiconductors

Compound semiconductor manufacturing employs ALD of high-K dielectrics and TiN conductive films for improved transistor and capacitor performance and manufacturing yields. Stacks of GaAlN/Ta₂O₅/TiN and TiN/Ta₂O₅/TiN, along with complementary, in-situ surface preparation available from Sundew are migrating into next generation compound semiconductor power, LED and RF ICs.

Advantages and Benefits:

High productivity sub-second cycle time ALD
Conformal deposition into nanometer size features with aspect ratios in excess of 100 and area enhancement in excess of 50X
Composite dielectric films for enhanced thermal stability and interface engineering
Reproducible and scalable processes
Highest quality dielectric layers with high dielectric constant and dielectric strength
Monolayer controlled film composition and interface engineering
Seamless incorporation of nanolaminates
Sub-nanometer interface roughness
High throughput <300 °C TiN true ALD process